| PART |
Description |
Maker |
| TS122 TS122P TS122PTR TS122S TS122STR |
CAP 470UF 10V ELECT VS SMD
Single Pole OptoMOS Relay
|
Clare Inc.
CLARE[Clare, Inc.]
|
| IXFK48N50Q IXFX44N50Q |
CAP 10000UF 50V ELECT SCREW TERM
HiPer FET Power MOSFETs Q-CLASS
|
ETC[ETC]
IXYS[IXYS Corporation]
|
| LT1226 LT1226C LT1226CN8 LT1226CS8 |
CAP 82000UF 16V ELECT THA SERIES 低噪声超高速运算放大器
Low Noise Very High Speed Operational Amplifier
From old datasheet system
|
Linear Technology, Corp.
LINER[Linear Technology]
|
| AC12FGM AC12DGM AC12EGM |
10A mold triac
12A MOLD TRIAC
CAPACITOR 56000UF 16V ELECT TSUP 2A模具可控
|
NEC[NEC]
NEC, Corp.
|
| MC74HC157A MC74HC157AD MC74HC157ADR2 MC74HC157ADT |
Quad 2-Input Data Selectors/Multiplexers High-Performance Silicon-Gate CMOS
Data Selector/Multiplexer 2-Input Q
CAP ELECT 100UF 35V TK SMD
|
ONSEMI[ON Semiconductor]
|
| LFCN-1575 LFCN-1575D |
Low Pass Filter
CAP 330UF 10V ELECT TG SMD 7 SECTIONS - 7 SECTIONS, 1875 MHz, CERAMIC LPF
|
Mini-Circuits
|
| 74HC160 74HC160PW 74HC160D 74HC160DB 74HC160N 74HC |
Presettable synchronous BCD decade counter asynchronous reset
CAP 2700UF 6.3V ELECT FC RADIAL HCT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT UP DECADE COUNTER, PDSO16
74HC/HCT160; Presettable synchronous BCD decade counter; asynchronous reset
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| CAT122AC12VDC.45 CTA12 CAT12 CAT122AC18VDC.45 CAT1 |
Switching capacity up to 20A Small size and light weight
From old datasheet system
CAP 22000UF 35V ELECT THA SERIES
Switching capacity up to 20A Small size and light weight 交换能力高达20A体积小，重量
|
ETC
CIT[CIT Relay & Switch]
Electronic Theatre Controls, Inc.
|
| HFA1130 HFA1130EVAL HFA1130IB HFA1130IP FN3369 |
From old datasheet system
850MHz, Output Limiting, Low Distortion Current Feedback Operational Amplifier
850MHz/ Output Limiting/ Low Distortion Current Feedback Operational Amplifier
CAPACITOR 1500UF 200V ELECT TSUP
|
http://
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
